Optical anisotropy in GaN grown onto A-plane sapphire

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 159-162

  Alemu, Andenet ^a   Julier, Michel ^a   Campo, Javier ^a   Gil, Bernard ^a   Scalbert, Denis ^a   Lascaray, Jean Paul ^a   Nakamura, Shuji ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CHEMICAL BONDS; ELECTRON ENERGY LEVELS; EXCITONS; LIGHT POLARIZATION; REFLECTION; REFLECTOMETERS; SAPPHIRE; SEMICONDUCTOR GROWTH; STRAIN;

ELECTRON HOLE EXCHANGE ENERGY; GALLIUM NITRIDES; IN-PLANE ANISOTROPY; OPTICAL ANISOTROPY; OPTICAL RESPONSE; ORTHORHOMBIC STRAIN FIELD;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033528898     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00386-9     Document Type: Article

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