19GHz vertical Si p-channel MOSFET

Electronics Letters

Volumn 35, Issue 3, 1999, Pages 239-240

  Moers, J ^a   Klaes, D ^a   Tonnesmann A ^a   Vescan, L ^a   Wickenhauser S ^a   Marso, M ^a   Kordos P ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GATES (TRANSISTOR); LITHOGRAPHY; SEMICONDUCTING SILICON; TRANSCONDUCTANCE;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

MOSFET DEVICES;

EID: 0033521816     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990138     Document Type: Article

References (6)

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2. MIL Y., RISHTON, S., TAUR, Y., KERN, D., LII, T., LEE, K., JENKINS, K.A., QUINLAN, D., BROWN, T., Jr., DANNER, D., SEWELL, F., and POLCARI. M.: 'Experimental high performance sub-0.1μm channel nMOSFETs', IEEE Electron Device Lett., 1994, 15, (1), pp. 28-30
3. AZUMA, T., MATSUNAGA, K., KAWAMURA, D., MIMOTOGI, S., and ONISHI, Y.: 'Viability of conventional KrF imaging for 150nm lithography', J. Vac. Sci. Technol. B, 1997, B15, (6), pp. 2434-2438
4. RISCH, L., KRAUTSCHNEIDER, W.H., HOFMANN, F., SCHÄFER, H., AEUGLE, T., and RÖSNER, W.: 'Vertical MOS transistors with 70nm channel length', IEEE Trans., 1996, ED-43, (9), pp. 1495-1498
5. BEHAMMER, D., VESCAN, L., LOO, R., MOERS, J., MÜCK, A., LÜTH, H., and GRABOLLA, T.: 'Selectively grown vertical Si-p MOS transistor with short channel lengths', Electron. Lett., 1996, 32, (4), pp. 406-407
6. VESCAN, L.: 'Radiative recombination in SiGe/Si dots and wires selectively grown by LPCVD' in EBERL, K., et al. (Eds.): 'Low dimensional structures prepared by epitaxial growth or regrowth on patterned substrates' (Kluwer Academic Publisher, 1995), p. 173