|
Volumn 54, Issue 1, 1999, Pages 231-234
|
Si X-ray absorption near edge structure (XANES) of Si, SiC, SiO2, and Si3N4 measured by an electron probe X-ray microanalyzer (EPMA)
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ABSORPTION SPECTROSCOPY;
EMISSION SPECTROSCOPY;
MICROANALYSIS;
SILICA;
SILICON;
SILICON CARBIDE;
SILICON NITRIDE;
ELECTRON PROBE MICROANALYSIS (EPMA);
EXTENDED X RAY FINE STRUCTURE (EXAFS) SPECTROSCOPY;
X RAY ABSORPTION NEAR EDGE STRUCTURE (XANES) SPECTROSCOPY;
X RAY SPECTROSCOPY;
|
EID: 0033521430
PISSN: 05848547
EISSN: None
Source Type: Journal
DOI: 10.1016/S0584-8547(98)00153-0 Document Type: Article |
Times cited : (15)
|
References (21)
|