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Volumn 54, Issue 1, 1999, Pages 231-234

Si X-ray absorption near edge structure (XANES) of Si, SiC, SiO2, and Si3N4 measured by an electron probe X-ray microanalyzer (EPMA)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; EMISSION SPECTROSCOPY; MICROANALYSIS; SILICA; SILICON; SILICON CARBIDE; SILICON NITRIDE;

EID: 0033521430     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0584-8547(98)00153-0     Document Type: Article
Times cited : (15)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.