Modification of c-axis sapphire implanted with high dose yttrium ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 149, Issue 1-2, 1999, Pages 136-140

  Xie, Dong Zhu ^a   Zhu, De Zhang ^a   Cao, De Xin ^a   Cao, Jian Qing ^a   Pan, Hao Chang ^a   Xu, Hong Jie ^a  

^a Shanghai Institute of Nuclear Research AcademiaSinica   (China)

Author keywords

Ion implantation; Sapphire

Indexed keywords

ALUMINA; AMORPHIZATION; ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTALLIZATION; ION BOMBARDMENT; ION IMPLANTATION; MICROHARDNESS; PRECIPITATION (CHEMICAL); RADIATION DAMAGE; YTTRIUM;

ALPHA ALUMINA;

SAPPHIRE;

EID: 0033518359     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00630-2     Document Type: Article

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