Modification of single-crystal sapphire by ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 603-607

  Demaree, J D ^a   Kirkpatrick, S R ^b   Kirkpatrick, A R ^b   Hirvonen, J K ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Epion Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHROMIUM; CRYSTAL DEFECTS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; LIGHT TRANSMISSION; OPTICAL MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SINGLE CRYSTALS; SURFACE TREATMENT; TITANIUM;

PHONON TUNNELING SPECTROSCOPY; VISIBLE LIGHT TRANSMISSION SPECTROSCOPY;

SAPPHIRE;

EID: 0031547618     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)01128-7     Document Type: Article

References (5)

1. D.C. Harris, F. Schmid, J.J. Mecholsky, Jr. and Y.L. Tsai, Proc. SPIE, vol. 2286 (1994).
2. C.J. McHargue and W.B. Snyder, Jr., Proc. SPIE, vol. 1415 (1993).
3. L.R. Doolittle, Nucl. Inst. and Meth. B 15 (1986) 227.
4. J.M. Guerra, Photon Tunneling Microscopy Applications, Mater. Res. Soc., Symp. Proc., 332 (1993) 449-460.
5. J.D. Kleinmeyer and J.D. Demaree, to be published in Proc. SPIE 28th Symp. on Optics for High Powered Lasers, Oct. 1996.