Doping, activation of impurities, and defect annihilation in GaN by high pressure annealing

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 949-959

  Suski, T ^a   Jun, J ^a   Leszczynski, M ^a   Teisseyre, H ^a   Grzegory, I ^a   Porowski, S ^a   Baranowski, J M ^a   Rocket, A ^a   Strite, S ^a   Stonert, A ^a   Turos, A ^a   Tan, H H ^a   Williams, J S ^a   Jagadish, C ^a  

^a POLISH ACADEMY OF SCIENCES   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); HIGH PRESSURE EFFECTS IN SOLIDS; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; STRAIN; THERMAL STRESS;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 17144446578     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-949     Document Type: Conference Paper

References (24)