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Volumn 197, Issue 3, 1999, Pages 581-585
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Point defect characterization of Zn- and Cd-based semiconductors using positron lifetime spectroscopy
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Author keywords
II VI compounds; Point defects; Positron annihilation spectroscopy
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Indexed keywords
SEMICONDUCTING CADMIUM TELLURIDE;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR GROWTH;
SPECTROSCOPIC ANALYSIS;
POSITRON ANNIHILATION SPECTROSCOPY;
POSITRON LIFETIME SPECTROSCOPY;
POINT DEFECTS;
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EID: 0033514234
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)00960-9 Document Type: Article |
Times cited : (19)
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References (18)
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