Boron clustering in silicon under an interstitial flux: A study using delta doped structures

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 277-281

  Simpson, T W ^a   Mitchell, I V ^a   Baribeau, J M ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

BORON CLUSTERING; TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0031364093     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-277     Document Type: Conference Paper

References (10)