Properties of metallic ions implanted into sapphire

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 1059-1063

  Kobayashi, Tomohiro ^a   Terai, Takayuki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Charge state; Diffusion; RBS; Resistance; Sapphire; XPS

Indexed keywords

ALUMINA; ANNEALING; COPPER; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE; IRON; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SINGLE CRYSTALS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHARGE STATE; METALLIC IONS;

ION IMPLANTATION;

EID: 0033513771     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00881-7     Document Type: Article

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