Electrical property of high-fluence nickel-implanted single crystal alumina

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 116, Issue 1-4, 1996, Pages 187-190

  Kobayashi, Tomohiro ^a   Terai, Takayuki ^a   Yoneoka, Toshiaki ^a   Tanaka, Satoru ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; COMPUTER SIMULATION; ELECTRIC PROPERTIES; ELECTRON TUNNELING; IONS; NICKEL; OPTICAL MICROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS;

ACTIVATED ELECTRON TUNNELING; GAUSSIAN DISTRIBUTION; OPTICAL MICROSCOPE; TRIM CODE;

ION IMPLANTATION;

EID: 0030219494     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(96)00032-8     Document Type: Article

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