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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 426-431

Comparison of nucleation and growth of the crystalline and amorphous phase during MeV-ion irradiation of amorphous/crystalline interfaces

(3) Glaser, E a Fehlhaber, T a Breeger, B a

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

Author keywords

Amorphization; Crystallization; GaAs; InAs; Ion implantation; Ion radiation; Nucleation; Radiation damage; Semiconductors

Indexed keywords

AMORPHIZATION; CRYSTAL GROWTH; CRYSTALLIZATION; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; NUCLEATION; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON;

INDIUM ARSENIDE; ION BEAM CRYSTALLIZATION;

SEMICONDUCTOR MATERIALS;

EID: 0033513766 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(98)00871-4 Document Type: Article

Times cited : (9)

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