Ion beam induced epitaxial regrowth and interfacial amorphization of compound semiconductors

Materials Research Society Symposium - Proceedings

Volumn 438, Issue , 1996, Pages 175-185

  Glaser, E ^a   Fehlhaber, T ^a   Schulz, R ^a   Bachmann, T ^a   Gaiduk, P ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CRYSTAL ORIENTATION; CRYSTALLIZATION; DIFFUSION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION BEAMS; POINT DEFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STACKING FAULTS; TEMPERATURE;

INTERFACIAL AMORPHIZATION; ION BEAM INDUCED CRYSTALLIZATION; MICROTWIN; SEMICONDUCTOR COMPOUND;

SEMICONDUCTOR MATERIALS;

EID: 0030358783     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-438-175     Document Type: Conference Paper

References (20)