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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 512-516

The influence of implantation and annealing conditions on optical activity of Er3+ ions in 6H SiC

(5) Kozanecki, A a Jeynes, C b Barradas, N P b Sealy, B J b Jantsch, W c

a INSTITUTE OF PHYSICS (Poland)

b UNIVERSITY OF SURREY (United Kingdom)

c JOHANNES KEPLER UNIVERSITY LINZ (Austria)

Author keywords

Erbium; Ion implantation; Photoluminescence; Recrystallisation; SiC

Indexed keywords

ANNEALING; CRYSTALLIZATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ENERGY TRANSFER; ERBIUM; ION IMPLANTATION; MATHEMATICAL MODELS; NITROGEN; PHOTOLUMINESCENCE; POSITIVE IONS; SILICON CARBIDE;

CHANNELING SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033513714 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(98)00708-3 Document Type: Article

Times cited : (8)

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