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Volumn 264-268, Issue PART 1, 1998, Pages 501-504
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Photoluminescence and backscattering characterization of 6H SiC implanted with erbium and oxygen ions
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Author keywords
Erbium Centres; Ion Implantation; Photoluminescence; RBS
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTALLIZATION;
ELECTRON TRANSITIONS;
ERBIUM;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
HIGH TEMPERATURE EFFECTS;
ION IMPLANTATION;
OXYGEN;
PHOTOLUMINESCENCE;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SURFACE DECOMPOSITION;
SILICON CARBIDE;
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EID: 0031648297
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.264-268.501 Document Type: Article |
Times cited : (5)
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References (10)
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