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Volumn 264-268, Issue PART 1, 1998, Pages 501-504

Photoluminescence and backscattering characterization of 6H SiC implanted with erbium and oxygen ions

Author keywords

Erbium Centres; Ion Implantation; Photoluminescence; RBS

Indexed keywords

CRYSTAL DEFECTS; CRYSTALLIZATION; ELECTRON TRANSITIONS; ERBIUM; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; OXYGEN; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031648297     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.501     Document Type: Article
Times cited : (5)

References (10)
  • 1
    • 0027915710 scopus 로고
    • "Rare Earth Doped Semiconductors II", ed. by S. Coffa, A. Polman, R.N. Schwartz, Pittsburgh, PA
    • P.N. Favennec, H. L'Haridon, D. Mountonnet, M. Salvi, and M. Gauneau in "Rare Earth Doped Semiconductors II", ed. by S. Coffa, A. Polman, R.N. Schwartz, (Mater. Res. Soc. Symp. Proc. vol. 301, Pittsburgh, PA, 1993), p. 181.
    • (1993) Mater. Res. Soc. Symp. Proc. , vol.301 , pp. 181
    • Favennec, P.N.1    L'Haridon, H.2    Mountonnet, D.3    Salvi, M.4    Gauneau, M.5
  • 5
    • 0030383887 scopus 로고    scopus 로고
    • "Rare Earth Doped Semiconductors II", ed. by S. Coffa, A. Polman, R.N. Schwartz, Pittsburgh, PA
    • M. Yoganathan, W.J. Choyke, R.P. Devaty, G. Pensl, and J.A. Edmond in "Rare Earth Doped Semiconductors II", ed. by S. Coffa, A. Polman, R.N. Schwartz, (Mater. Res. Soc. Symp. Proc. vol. 422, Pittsburgh, PA, 1996), p. 339.
    • (1996) Mater. Res. Soc. Symp. Proc. , vol.422 , pp. 339
    • Yoganathan, M.1    Choyke, W.J.2    Devaty, R.P.3    Pensl, G.4    Edmond, J.A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.