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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 1272-1276

Ion beam analysis of 6H SiC implanted with erbium and ytterbium ions

(4) Kozanecki, A a Jeynes, C b Sealy, B J b Nejim, A b

a INSTITUTE OF PHYSICS (Poland)

b UNIVERSITY OF SURREY (United Kingdom)

Author keywords

Damage annealing; Erbium; Ion implantation; Recrystallization; SiC; Ytterbium

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTALLIZATION; ERBIUM; ION BEAMS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; YTTERBIUM;

ION CHANNELING;

SILICON CARBIDE;

EID: 0032020948 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(97)00828-8 Document Type: Article

Times cited : (12)

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