Effects of crystal defects on the stopping powers for channeled ions in ion implanted single crystals

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 172-175

  Kotai E ^a  

^a WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

Author keywords

Channeling; Implantation; Stopping power

Indexed keywords

BACKSCATTERING; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ION BEAMS; ION BOMBARDMENT; PROTONS; RADIATION DAMAGE; RESONANCE; SILICON; SINGLE CRYSTALS;

ELECTRONIC STOPPING POWER;

ION IMPLANTATION;

EID: 0033513711     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00838-6     Document Type: Article

References (11)

1. J. Lindhard, K. Dan. Vidensk. Selk. Mat. Fys. Medd. 34 (1965) 14.
2. M.T. Robinson, Phys. Rev. 179 (1969) 3.
3. M.T. Robinson, Phys. Rev. B 4 (1971) 1461.
4. K. Dettmann, M.T. Robinson, Phys. Rev. B 10 (1974) 1.
5. K. Dettmann, Z. Phys. A 272 (1975) 227.
6. H. Esbensen, J.A. Giolovchenko, Nucl. Phys. A 298 (1978) 382.
7. O.N. Jarvis, A.C. Sherwood, C. Whitehead, Rad. Eff. 36 (1978) 215.
8. H. Oetzmann, S. Kalbitzer, Rad. Eff. 47 (1980) 73.
9. E. Kótai, Nucl. Instr. and Meth. 118 (1996) 43.
10. E. Kótai, Nucl. Instr. and Meth. B 85 (1994) 588.
11. G. de M. Azevedo, M. Behar, J.F. Dias, P.L. Grande, J.H.R. dos Santos, R. Stoll, C. Klatt, S. Kalbitzer, Nucl. Instr. and Meth. B 136-138 (1998) 132.