Experimental study of InP-based InAlAs/InGaAs quantum well infrared photodetectors operating at the 3-5 μm wavelength region

Chinese Physics Letters

Volumn 16, Issue 10, 1999, Pages 747-749

  Zhang, Yong gang ^a   Li, Ai zhen ^a   Chen, Jian xin ^a   Yang, Quan kui ^a   Ren, Yao cheng ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; PHOTONS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

BACKGROUND-LIMITED INFRARED PERFORMANCE; ELECTRICAL CHARACTERISTIC; GAS-SOURCE MOLECULAR BEAM EPITAXY; INALAS/INGAAS; INGAAS QUANTUM WELLS; OPTICAL CHARACTERISTICS; PEAK RESPONSE; SPECTRAL WIDTHS; STRUCTURAL CHARACTERISTICS; WAVELENGTH REGIONS;

QUANTUM WELL INFRARED PHOTODETECTORS;

EID: 0033467863     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/16/10/017     Document Type: Article

References (6)

1. For example, S. D. Gunapala, S. V. Bandara, J. K. Liu, W. Hong, M. Sundaram, P. D. Maker, R. E. Muller, C. A. Shott and R. Carralejo, IEEE Trans. Electron. Devices, 45 (1998) 1890.
2. B. F. Levine, A. Y. Cho, J. Walker, R. J. Malik, D. A. Kleinman and D. L. Sivco, Appl. Phys. Lett. 52 (1988) 1481.
3. G. Hasnain, B. F. Levine, D. L. Sivco and A. Y. Cho, Appl. Phys. Lett. 56 (1990) 770.
4. ZHANG Yong-gang, LI Ai-zhen, CHEN Jian-xin and REN Yao-cheng, Chin. Phys. Lett. 14 (1997) 443.
5. For example, J. Faist, A. Tredicucci, F. Capasso, C. Sirtori, D. L. Sivco, J. N. Baillargeon, A. L. Hutchinson and A. Y. Cho, IEEE J. Quantum Electron. 34 (1998) 336.
6. S. R. Andrews and B. A. Miller, J. Appl. Phys. 70 (1991) 993.