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Volumn 14, Issue 6, 1997, Pages 443-445
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InAlAs/InGaAs quantum well infrared photodetectors with 3-5μm band grown by gas source molecular beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
GALLIUM COMPOUNDS;
GAS SOURCE MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
PHOTONS;
QUANTUM WELL INFRARED PHOTODETECTORS;
SEMICONDUCTOR QUANTUM WELLS;
CHARACTERISTIC SPECTRUM;
GAS-SOURCE MOLECULAR BEAM EPITAXY;
INALAS/INGAAS;
INGAAS QUANTUM WELLS;
KRONIG-PENNEY MODELS;
MULTIQUANTUM WELL STRUCTURES;
PEAK RESPONSE;
RESPONSE SPECTRA;
SUBBAND ENERGIES;
WELL WIDTH;
INFRARED DETECTORS;
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EID: 0031322789
PISSN: 0256307X
EISSN: None
Source Type: Journal
DOI: 10.1088/0256-307X/14/6/012 Document Type: Article |
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Times cited : (5)
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References (4)
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