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Volumn 1, Issue 3, 1997, Pages 221-226

Solid-state interdiffusion mechanism in strained Si1-xGex/Si heterostructures

Author keywords

DCXD; Dislocation; MBE growth; SiGe heterointerface; Thermal interdiffusion

Indexed keywords


EID: 0031493935     PISSN: 14328488     EISSN: None     Source Type: Journal    
DOI: 10.1007/s100080050052     Document Type: Article
Times cited : (4)

References (28)
  • 18
    • 3142634305 scopus 로고    scopus 로고
    • Ph D thesis, Jeonbuk National University, Chonju, Korea
    • Kim HS (1997) Ph D thesis, Jeonbuk National University, Chonju, Korea, p 38
    • (1997) , pp. 38
    • Kim, H.S.1
  • 24
    • 0000668128 scopus 로고
    • Albany JH (ed) Defects and radiation effects in semiconductors, Institute of Physics, London
    • Hettich G, Mehren H, Maier K (1978) In: Albany JH (ed) Defects and radiation effects in semiconductors Inst Phys Conf Series 46, Institute of Physics, London, p 500
    • (1978) Inst Phys Conf Series , vol.46 , pp. 500
    • Hettich, G.1    Mehren, H.2    Maier, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.