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Volumn 16, Issue 4, 1999, Pages 293-294
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Structural and photoluminescence characterization of GaN film grown on Si (111) substrate
a
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Author keywords
[No Author keywords available]
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Indexed keywords
EPILAYERS;
FULL WIDTH AT HALF MAXIMUM;
GALLIUM NITRIDE;
III-V SEMICONDUCTORS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
ORGANIC CHEMICALS;
ORGANOMETALLICS;
PHOTOLUMINESCENCE;
PHOTOLUMINESCENCE SPECTROSCOPY;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR QUANTUM WELLS;
SILICON COMPOUNDS;
EPILAYERS GROWN;
FULL WIDTHS AT HALF MAXIMUMS;
GAN EPILAYERS;
GAN FILM;
METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS;
PHOTOLUMINESCENCE CHARACTERIZATION;
REACTION METHOD;
SI(111) SUBSTRATE;
STRUCTURAL CHARACTERIZATION;
VAPOR MOLECULES;
X RAY DIFFRACTION;
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EID: 0033442642
PISSN: 0256307X
EISSN: None
Source Type: Journal
DOI: 10.1088/0256-307X/16/4/023 Document Type: Article |
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Times cited : (4)
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References (8)
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