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Volumn 35, Issue SUPPL. 1, 1999, Pages

Addimer diffusions on Si(100)

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0033441821     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (23)
  • 3
    • 0342360710 scopus 로고
    • Proceedings of the 3rd NEC Symposium on Fundamental Approach to New Material Phases, Springer-Verlag, Berlin
    • D. Dijkkamp, E. J. van Loenen, and H. B. Elswijk, in Proceedings of the 3rd NEC Symposium on Fundamental Approach to New Material Phases, Springer Series on Material Science (Springer-Verlag, Berlin, 1992).
    • (1992) Springer Series on Material Science
    • Dijkkamp, D.1    Van Loenen, E.J.2    Elswijk, H.B.3
  • 14
    • 19544380110 scopus 로고    scopus 로고
    • note
    • In the paper [13], they considered the energy barrier (1.15 eV) for break up of the dimer(between A and B on Fig. 1 of Ref. 13). The energy barrier for the full diffusion of addimer from A to E is 1.26 eV because the barrier between B and C should be considered.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.