메뉴 건너뛰기




Volumn 34, Issue SUPPL. 3, 1999, Pages

Fabrication and characterization of high voltage Ni/6H-SiC and Ni/4H-SiC Schottky barrier diodes

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0033408210     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (7)

References (14)
  • 12
    • 0009379863 scopus 로고
    • Silicon carbide and related materials 1995
    • S. Nakashima, H. Matsunami, S. Yoshida and H. Harima eds. Institute of Physics Publishing, Bristol and Philadelphia, Enamors
    • A. Itoh, O. Takemura, T. Kimoto and H. Matsunami, Silicon Carbide and Related Materials 1995, S. Nakashima, H. Matsunami, S. Yoshida and H. Harima eds. (Institute of Physics Publishing, Bristol and Philadelphia, 1995), Institute of Physics Conference Series Number 142, p. 685.Enamors
    • (1995) Institute of Physics Conference Series Number 142 , vol.142 , pp. 685
    • Itoh, A.1    Takemura, O.2    Kimoto, T.3    Matsunami, H.4
  • 14
    • 0009379863 scopus 로고
    • Silicon carbide and related materials 1995
    • S. Nakashima, H. Matsunami, S. Yoshida and H. Harima eds. Institute of Physics Publishing, Bristol and Philadelphia
    • M. Lang, T. Isaac-Smith, C. C. Tin and J. R. Williams, Silicon Carbide and Related Materials 1995, S. Nakashima, H. Matsunami, S. Yoshida and H. Harima eds. (Institute of Physics Publishing, Bristol and Philadelphia 1995), Institute of Physics Conference Series Number 142, p. 681.
    • (1995) Institute of Physics Conference Series Number 142 , vol.142 , pp. 681
    • Lang, M.1    Isaac-Smith, T.2    Tin, C.C.3    Williams, J.R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.