Electron irradiation of heavily doped silicon: Group-III impurity ion pairs

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 287-290

  Emtsev, V V ^a   Ehrhart, P ^b   Poloskin, D S ^a   Dedek, U ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON IRRADIATION; SEMICONDUCTOR DOPING;

IMPURITY ION PAIRS;

SEMICONDUCTING SILICON;

EID: 0033357060     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00506-2     Document Type: Article

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