Activation efficiency characteristics in P and Ge-doped In0.5Ga0.5P epilayers

Solid State Communications

Volumn 112, Issue 11, 1999, Pages 643-648

  Lee, J H ^a   Choi, J C ^a   Park, H L ^a   Kim, T W ^b  

^a Yonsei University   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC PROPERTIES; GERMANIUM; HALL EFFECT; HETEROJUNCTIONS; LIQUID PHASE EPITAXY; MOLECULAR WEIGHT; OPTICAL PROPERTIES; PHOSPHORUS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

ATOMIC MOLE FRACTION; BAND FILLING EFFECTS; COMPENSATION RATIO; SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033356048     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00403-2     Document Type: Article

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