Transport property of Sn-doped In0.5Ga0.5P layers grown by liquid phase epitaxy

Thin Solid Films

Volumn 340, Issue 1, 1999, Pages 297-300

  Yoon, I T ^a,b   Park, H L ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; FILM GROWTH; HALL EFFECT; IONIZATION; LIQUID PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

HALL MOBILITY; IONIZATION ENERGY;

ELECTRON TRANSPORT PROPERTIES;

EID: 0032686382     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01229-2     Document Type: Article

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