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Journal of Non-Crystalline Solids

Volumn 211, Issue 1-2, 1997, Pages 158-163

Mechanisms of photo-bleaching of 5 eV optical absorption band in hydrogen loaded Ge-doped SiO2

(3) Awazu, Koichi a,c Onuki, Hideo a Muta, Ken Ichi b

a ELECTROTECHNICAL LABORATORY (Japan)

b Showa Elec Wire and Cable Co Ltd (Japan)

c UNIVERSITÉ DE MONTRÉAL (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; DOPING (ADDITIVES); GERMANIUM; HYDROGEN; LIGHT ABSORPTION; PHOTOCHEMICAL REACTIONS; ULTRAVIOLET RADIATION;

GERMANIUM LONE PAIR CENTERS; NEUTRAL OXYGEN VACANCY;

FUSED SILICA;

EID: 0031123742 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(96)00613-8 Document Type: Article

Times cited : (23)

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