Defect formation in GeO2-SiO2 glass by poling with ArF laser excitation

Applied Physics Letters

Volumn 71, Issue 8, 1997, Pages 993-995

  Takahashi, M ^a,b   Fujiwara, T ^a   Kawachi, T ^a   Ikushima, A J ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b KOBE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000834314     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119749     Document Type: Article

References (13)

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