Reduction of surface recombination in InGaAs/InP heterostructures using UV-irradiation and ozone

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1124-1127

  Driad, Rachid ^a   Lu, Zheng Hong ^a   Laframboise, Sylvain ^a   Scansen, Donald ^a   McKinnon, William Ross ^a   McAlister, Sean Patrick ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Heterojunction bipolar transistors (HBTs); InGaAs; InP; Passivation; Surface recombination currents

Indexed keywords

ELECTRIC PROPERTIES; ELECTRONIC DENSITY OF STATES; LEAKAGE CURRENTS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; STOICHIOMETRY; SURFACE PROPERTIES; SURFACE TREATMENT; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE RECOMBINATION EFFECTS; ULTRAVIOLET OZONE TREATMENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032625288     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1124     Document Type: Article

References (15)

1. W. E. Spicer, I. Lindau, P. Skeath and C. Y. Su: J. Vac. Sci. & Technol. 17 (1980) 1019.
2. C. J. Sandroff, R. N. Nottenburg, J. C. Bischoff and R. Bhat: Appl. Phys. Lett. 51 (1987) 33.
3. E. Y. Chang, G. T. Cibuzar and K. P. Pande: IEEE Trans. Electron Devices 35 (1988) 1412.
4. O. Nakajima, K. Nagata, H. Ito, T. Ishibashi and T. Sugeta: Jpn. J. Appl. Phys. 24 (1985) L596.
5. D. Caffin, L. Bricard, J. L. Courant, L. S. How Kee Chun, B. Lescault, A. M. Duchenois, M. Meghelli, J. L. Benchimol and P. Launay: Int. Proc. InP and Related Materials, Massachusets (1997) p. 637.
6. R. Driad, Z. H. Lu, S. Laframboise, D. Scansen, W. R. McKinnon and S. P. McAlister: Int. Proc. InP and Related Materials, Tsukuba (1998) p. 459.
7. A. Ouacha, M. Willander, B. Hammarlund and R. A. Logan: J. Appl. Phys. 74 (1993) 5602.
8. H. Fukano, Y. Takanashi and M.Fujimoto: Jpn. J. Appl. Phys. 32 (1993) L1788.
9. J. R. Vig: J. Vac. Sci. & Technol. A-3 (1985) 1027.
10. S. Ingrey: J. Vac. Sci. & Technol. A-10 (1992) 829.
11. A. A. Iliadis: Electron. Lett. 25 (1989) 572,
12. see also, S. Loualiche, A. Ginoudi, H. L'Haridon, M. Salvi, A. Le Corre, D. Lecrosnier and P. N. Favennec: Appl. Phys. Lett. 54 (1989) 573.
13. S. P. McAlister, W. R. McKinnon, R. Driad and A. R. Renaud: J. Appl. Phys. 82 (1997) 5231.
14. Z. H. Lu, B. Bryskiewicz, J. McCaffrey, Z. Wasilewski and M. J. Graham: J. Vac. Sci. & Technol. B-11 (1993) 2033.
15. J. K. Paul and D. N. Bose: J. Appl. Phys. 70 (1991) 7387.