Electronic configurations in coupled many-electron quantum-dot systems

Semiconductor Science and Technology

Volumn 14, Issue 11, 1999, Pages 949-957

  Yakimenko, I I ^a   Zozoulenko, I V ^a   Berggren, K F ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; ELECTRON TUNNELING; ELECTRONIC STRUCTURE; INTEGRAL EQUATIONS; NUMERICAL METHODS; SEMICONDUCTOR DEVICE STRUCTURES; TWO DIMENSIONAL;

ELECTRONIC CONFIGURATION; ELECTROSTATIC TUNING; THOMAS-FERMI EQUATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033350355     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/11/301     Document Type: Article

References (30)

1. Kirk W P and Reed M A (eds) 1992 Nanostructures and Mesoscopic Systems (Boston, MA: Academic)
2. Averin D V and Likharev K K 1991 Mesoscopic Phenomena in Solids ed B L Altshuler, P A Lee and R A Webb (Amsterdam: Elsevier)
3. Korotkov A N and Likharev K K 1998 J. Appl. Phys. 84 6114
4. Roychowdhury V P, Janes D B and Bandyopadhyay S 1997 Proc. IEEE 85 574
5. Lent C S, Tougaw P D, Porod W and Bernstein G H 1993 Nanotechnology 4 49
6. Kane B E 1998 Nature 393 133
7. Loss D and Di Vincenzo D P 1998 Phys. Rev. A 57 120
8. Burkard G, Loss D and Di Vincenzo D P 1999 Phys. Rev. B 59 2070
9. Lent C S, Tougaw P D and Porod W 1993 J. Appl. Phys. 74 3558 Lent C S and Tougaw P D 1993 J. Appl. Phys. 74 6227 Lent C S and Tougaw P D 1994 J. Appl. Phys. 75 1818
10. Lent C S, Tougaw P D and Porod W 1993 J. Appl. Phys. 74 3558 Lent C S and Tougaw P D 1993 J. Appl. Phys. 74 6227 Lent C S and Tougaw P D 1994 J. Appl. Phys. 75 1818
11. Lent C S, Tougaw P D and Porod W 1993 J. Appl. Phys. 74 3558 Lent C S and Tougaw P D 1993 J. Appl. Phys. 74 6227 Lent C S and Tougaw P D 1994 J. Appl. Phys. 75 1818
12. Bandyopadhyay S, Das B and Miller A E 1994 Nanotechnology 5 113
13. Landauer R 1995 Phil. Trans. R. Soc. A 353 367
14. Landauer R 1996 IEEE Trans. Electron Devices 43 1637
15. Tougaw P D and Lent C S 1996 J. Appl. Phys. 80 4722
16. Wang C-K, Yakimenko I I, Zozoulenko I V and Berggren K-F 1998 J. Appl. Phys. 84 2684
17. Yakimenko I I, Zozoulenko I V, Wang C-K and Berggren K-F 1999 J. Appl. Phys. 85 6571
18. Orlov A O, Amlani I, Toth G, Lent C S, Bernstein G H and Snider G L 1998 Appl. Phys. Lett. 73 2787
19. Governale M, Macucci M, Iannaccone G, Ungarelli C and Martorell J 1999 J. Appl. Phys. 85 2962
20. Martorell J and Sprung D W L 1997 unpublished
21. Laux S E, Franck J D and Stern F 1988 Surf. Sci. 196 101
22. Davies J H 1988 Semicond. Sci. Technol. 3 995
23. Nixon J A and Davies J H 1990 Phys. Rev. B 41 7929
24. Davies J H, Larkin I A and Sukhorukov E V 1995 J. Appl. Phys. 77 4504
25. Martorell J, Wu H and Sprung D W L 1994 Phys. Rev. B 50 17 298
26. Sprung D W L and Martorell J 1996 Solid State Commun. 99 701
27. Shikin V, Nazin S, Heitmann D and Demel T 1991 Phys. Rev. B 43 11 903
28. Macucci M, Hess K and Iafrate G L 1993 Phys. Rev. B 48 17 354
29. Macucci M, Hess K and Iafrate G L 1995 J. Appl. Phys. 77 3267
30. Davies J H 1998 The Physics of Low-Dimensional Semiconductors: an Introduction (Cambridge: Cambridge University Press)