Properties of tantalum oxide thin films grown by atomic layer deposition

Thin Solid Films

Volumn 260, Issue 2, 1995, Pages 135-142

  Kukli, Kaupo ^a   Aarik, Jaan ^a   Aidla, Aleks ^a   Kohan, Oksana ^a   Uustare, Teet ^a   Sammelselg, Väino ^b  

^a UNIVERSITY OF TARTU   (Estonia)

^b ESTONIAN ACADEMY OF SCIENCES   (Estonia)

Author keywords

Deposition process; Optical coatings; Oxides; Structural properties

Indexed keywords

EID: 0000097220     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(94)06388-5     Document Type: Article

References (34)

1. Effects of oxygen content on the optical properties of tantalum oxide films deposited by ion-beam sputtering
2. Deposition of optical thin films by pulsed laser assisted evaporation
3. Characterization of Ta2O5 layers by electron spectroscopy for chemical analysis rutherford backscattering spectrometry, nuclear reaction analysis and optical methods
4. Electroluminescent devices with different insulator/semiconductor interfaces prepared by rf sputtering
5. Preparation of (111)-Oriented β-Ta2O5Thin Films by Chemical Vapor Deposition Using Metalorganic Precursors
6. Advanced Dielectrics Deposited by LPCVD
7. An X-Ray Investigation of the Tantalum-Oxygen System.
8. Beitr�ge zur Chemie der Elemente Niob und Tantal. XXV. Das Gleichgewicht Ta2O5 + 3 TaCl5g = 5 TaOCl3g