Highly Selective Etching of Poly-Si by Time Modulation Bias

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 A, 1999, Pages 5292-5296

  Ono, Tetsuo ^a   Miyazaki, Hiroshi ^a   Mizutani, Tatsumi ^a   Goto, Yasushi ^a   Kure, Tokuo ^a  

^a HITACHI LTD   (Japan)

Author keywords

Etching, time modulation bias; Poly si; Selectivity

Indexed keywords

DEPOSITION; DRY ETCHING; ELECTRIC POTENTIAL; ELECTRON CYCLOTRON RESONANCE; ION BOMBARDMENT; OXYGEN; SILICA; SUBSTRATES;

POLYSILICON; SELECTIVE ETCHING; TIME MODULATION BIAS;

SILICON WAFERS;

EID: 0033349510     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5292     Document Type: Article

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