Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

Physica B: Condensed Matter

Volumn 272, Issue 1-4, 1999, Pages 318-323

  Tackeuchi, Atsushi ^a   Kuroda, Takamasa ^a   Muto, Shunichi ^b   Wada, Osamu ^a  

^a WASEDA UNIVERSITY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ABSORPTION; QUANTUM THEORY; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

D'YAKONOV-PEREL' PROCESS; ELLIOT-YAFET PROCESS; PICOSECOND ELECTRON-SPIN RELAXATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033344504     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00383-X     Document Type: Article

References (26)

1. Nishikawa Y., Tackeuchi A., Yamaguchi M., Muto S., Wada O. IEEE J, Select. Top. Quantum Electron. 2:1996;661.
2. Hyland J.T., Kennedy G.T., Miller A. IEEE Photon. Tech. Lett. 10:1998;1419.
3. Kawazoe T., Mishina T., Masumoto Y. Jpn. J. Appl. Phys. 32:1993;L1756.
4. Ando H., Sogawa T., Gotoh H. Appl. Phys. Lett. 73:1998;566.
5. Elliott R.J. Phys. Rev. 96:1954;266.
6. Yafet Y. Solid State Phys. 14:1963;1.
7. D'yakonov M.I., Kachorovski V.Yu. Sov. Phys. Semicond. 20:1986;110.
8. Bir G.L., Aronov A.G., Pikus G.E. Sov. Phys. JETP. 42:1976;705.
9. Tackeuchi A., Muto S., Inata T., Fujii T. Appl. Phys. Lett. 56:1990;2213.
10. van der Poel W.A.J.A., Severens A.L.G.J., van Kesteren H.W. Superlattices Microstruct. 5:1989;115.
11. Damen T.C., Leo K., Shah J., Cunningham J.E. Appl. Phys. Lett. 58:1991;1902.
12. Bastard G., Ferreira R. Surf. Sci. 267:1992;335.
13. Tackeuchi A., Wada O. Jpn. J. Appl. Phys. 37:1998;98.
14. Britton R.S., Grevatt T., Malinowski A., Harley R.T., Perozzo P., Cameron A.R., Miller A. Appl. Phys. Lett. 73:1998;2140.
15. Terauchi R., Ohno Y., Adachi T., Sato A., Matsukura F., Tackeuchi A., Ohno H. Jpn. J. Appl. Phys. 38:1999;2549.
16. Knox W.H., Hirlimann C., Miller D.A.B., Shah J., Chemla D.S., Shank C.V. Phys. Rev. Lett. 56:1986;1191.
17. Roussignol Ph., Rolland P., Ferreira R., Delalande C., Bastard G., Vinattieri A., Carraresi L., Colocci M., Etienne B. Surf. Sci. 267:1992;360.
18. Wagner J., Schneider H., Richards D., Fischer A., Ploog K. Phys. Rev. B. 47:1993;4786.
19. Vinattieri A., Shah J., Damen T.C., Goosesen K.W., Pfeifer L.N., Maialle M.Z., Sham L.J. Appl. Phys. Lett. 63:1993;3164.
20. Adachi S., Miyashita T., Takeyama S., Takagi Y., Tackeuchi A. J. Lumin. 72-74:1997;307.
21. Tackeuchi A., Wada O., Nishikawa Y. Appl. Phys. Lett. 70:1997;1131.
22. Fishman G., Lampel G. Phys. Rev. B. 16:1977;820.
23. Tackeuchi A., Kuroda T., Muto S., Nishikawa Y., Wada O. Jpn. J. Appl. Phys. 38:1999;4680.
24. Guettler T., Triques A.L.C., Vervoort L., Ferreira R., Roussignol Ph., Voisin P., Rondi D., Harmand J.C. Phys. Rev. B. 38:1998;R10179.
25. A. Tackeuchi, T. Kuroda, A. Shikanai, T. Sota, A. Kuramata, K. Domen, Proceedings of the Ninth International Conference on Modulated Semiconductor Structures, H18, Kyoto, Japan, 1999.
26. R. Takahashi, H. Itoh, H. Iwamura, Technical Digest of CLEO99, CThF4, Baltimore, USA, 1999.