Ultrafast all-optical spin polarization switch using quantum-well etalon

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 2, Issue 3, 1996, Pages 661-667

  Nishikawa, Yuji ^a   Tackeuchi, Atsushi ^a,b   Yamaguchi, Masaomi ^a   Muto, Shunichi ^a,c   Wada, Osamu ^a,b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETALONS; LIGHT POLARIZATION; OPTICAL COMMUNICATION; OPTIMIZATION; SEMICONDUCTOR QUANTUM WELLS; ULTRAFAST PHENOMENA;

CARRIER LIFETIME; CARRIER SPIN RELAXATION;

OPTICAL SWITCHES;

EID: 0030230929     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.571766     Document Type: Article

References (25)

1. S. Kawanishi, T. Morioka, O. Kamatani, H. Takara, J. M. Jacob, and M. Saruwatari, "100 Gbit/s all-optical demultiplexing using four-wave mixing in a traveling wave laser diode amplifier," Electron. Lett., vol. 30, pp. 981-982, 1994.
2. D. Hulin, A. Mysyrowicz, A. Antonetti, A. Migus, W. T. Masselink, H. Morkoç, H. M. Gibbs, and N. Peyghambarian, "Ultrafast all-optical gate with subpicosecond ON and OFF response time," Appl. Phys. Lett., vol. 49, pp. 749-751, 1986.
3. R. Jin, J. P. Sokoloff, P. A. Harten, C. L. Chuang, S. G. Lee, M. Warren, H. M. Gibbs, and N. Peyghambarian, "Ultrafast modulation with subpicosecond recovery time in a GaAs/AlGaAs nonlinear directional coupler," Appl. Phys. Lett. 56, pp. 993-995, 1990.
4. I. Glesk, J. P. Sokoloff, and P. R. Prucnal, "Demonstration of all-optical demultiplexing of TDM data at 250 Gbit/s," Electron. Lett. 30, pp. 339-341, 1994.
5. S. Nakamura, K. Tajima, and Y. Sugimoto, "Experimental investigation on high-speed switching characteristics of a novel symmetric Mach-Zehnder all-optical switch," Appl. Phys. Lett., vol. 65, pp. 283-285, 1994.
6. A. L. Lentine, D. A. B. Miller, J. E. Henry, J. E. Cunningham, and L. M. F. Chirovsky, "Multistate self-electrooptic effect devices," IEEE J. Quantum Electron., vol. 25, pp. 1921-1927, 1989.
7. A. L. Lentine, H. S. Hinton, D. A. B. Miller, J. E. Henry, J. E. Cunningham, and L. M. F. Chirovsky, "Symmetric self-electrooptic effect device: optical set-reset latch, differential logic gate, and differential modulator/detector," IEEE J. Quantum Electron., vol. 25, pp. 1928-1936, 1989.
8. J. Feldmann, K. W. Goossen, D. A. B. Miller, A. M. Fox, J. E. Cunningham, and W. Y. Jan, "Fast escape of photocreated carriers out of shallow quantum wells," Appl. Phys. Lett., vol. 59, pp. 66-68, 1991.
9. A. Migus, A. Antonetti, D. Hulin, A. Mysyrowicz, H. M. Gibbs, N. Peyghambarian, and J. L. Jewell, "One-picosecond optical NOR gate at room temperature with a GaAs-AlGaAs multiple-quantum-well nonlinear Fabry-Perot etalon," Appl. Phys. Lett., vol. 46, pp. 70-72, 1985.
10. S. G. Lee, B. P. McGinnis, R. Jin, J. Yumoto, G. Khitrova, H. M. Gibbs, R. Binder, S. W. Koch, and N. Peyghambarian, "Subpicosecond switching in a current injected GaAs/AlGaAs multiple-quantum-well nonlinear directional coupler," Appl. Phys. Lett., vol. 64, pp. 454-456, 1994.
11. K. Al-hemyari, A. Villeneuve, J. U. Kang, J. S. Aitchison, C. N. Ironside, and G. I. Stegeman, "Ultrafast all-optical switching in GaAlAs directional couplers at 1.55 μm without multiphonon absorption," Appl. Phys. Lett., vol. 63, pp. 3562-3564, 1993.
12. E. S. Harmon, H. R. Melloch, J. M. Woodall, D. D. Nolte, N. Otsuka, and C. L. Chang, "Carrier lifetime versus anneal in low temperature growth GaAs," Appl. Phys. Lett., vol. 63, pp. 2248-2250, 1993.
13. H. H. Wang, J. F. Whitaker, H. Fujioka, and Z. Liliental-Weber, "Arsenic-ion-implanted GaAs as an ultrafast photoconductor," in Tech. Dig. Ultrafast Electronics and Optoelectronics, OSA Top. Meet., 1995 Tech. Dig. Ser. Washington, DC: Opt. Soc. Amer., 1995, vol. 13, pp. 32-34.
14. R. Takahashi, Y. Kawamura, T. Kagawa and H. Iwamura, "Ultrafast 1.55-μm phototesponses in low-temperature-grown InGaAs/lnAlAs quantum wells," Appl. Phys. Lett., vol. 65, pp. 1790-1792, 1994.
15. Y. Nishikawa, A. Tackeuchi, S. Nakamura, S. Muto, and N. Yokoyama, "All-optical picosecond switching of a quantum well etalon using spinpolarization relaxation," Appl. Phys. Lett., vol. 66, pp. 839-841, 1995.
16. A. Tackeuchi, Y. Nishikawa, and O. Wada, "Room temperature electron spin relaxation process in GaAs/AlGaAs Quantum Wells and its Application to Picoseconds All-Optical Switching," Appl Phys. Lett., vol. 68, pp. 797-799, 1996.
17. M. I. D'yakonov and V. Yu. Kachorovskii, "Spin relaxation of two-dimensional electrons in noncentrosymmetric semiconductors," Fiiz. Tekh. Poluprovodn., vol. 20, pp. 178-181, 1986 (also in Sov. Phys. Semicond., vol. 20, pp. 110-112, 1986).
18. M. I. D'yakonov and V. Yu. Kachorovskii, "Spin relaxation of two-dimensional electrons in noncentrosymmetric semiconductors," Fiiz. Tekh. Poluprovodn., vol. 20, pp. 178-181, 1986 (also in Sov. Phys. Semicond., vol. 20, pp. 110-112, 1986).
19. G. Bastard and R. Ferreira, "Spin-flip scattering times in semiconductor quantum wells," Surf. Sci., vol . 267, pp. 335-341, 1992.
20. 1-xAs," Phys. Rev., vol. B12, pp. 5758-5765, 1975.
21. T. Kawazoe, T. Mishina, and Y. Masumoto, "Highly repetitive picosecond polarization switching in type-II AlGaAs/AlAs multiple quantum well structures," Jpn. J. Appl. Phys., vol. 32, pp. L1756-L1759, 1993.
22. J. L. Jewell, Y. H. Lee, M. Warren, H. M. Gibbs, N. Peyghambarian, A. C. Gossard and W. Wiegmann, "3-pJ, 82-Mhz optical logic gates in a room-temperature GaAs-AlGaAs multiple-quantum-well etalon," Appl. Phys. Lett., vol. 46, pp. 918-920, 1985.
23. R. J. Seymour and R. R. Alfano, "Time-resolved measurement of the electron-spin relaxation kinetics in GaAs," Appl. Phys. Lett., vol. 37, pp. 231-233, 1980.
24. A. Tackeuchi, S. Muto, T. Inata, and T. Fujii, "Direct observation of picosecond spin relaxation of excitons in GaAs/AlGaAs quantum wells using spin-dependent optical nonlinearity," Appl. Phys. Lett., vol. 56, pp. 2213-2215, 1990.
25. Y. Silberberg, P. W. Smith, D. A. B. Miller, B. Tell, A. C. Gossard, and W. Wiegmann, "Fast nonlinear optical response from protonbombarded multiple quantum well structures," Appl. Phys. Lett. vol. 46, pp. 701-703, 1985.