Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 8 B, 1999, Pages 4680-4687

  Tackeuchi, Atsushi ^a   Kuroda, Takamasa ^a   Muto, Shunichi ^b   Nishikawa, Yuji ^c   Wada, Osamu ^a  

^a WASEDA UNIVERSITY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

D'yakonov Perel'; Electron; Elliott Yafet; InGaAs; MOW; Spin relaxation

Indexed keywords

ELECTRON ABSORPTION; ENERGY GAP; MOLECULAR DYNAMICS; QUANTUM THEORY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

D'YAKONOV-PEREL PROCESS; ELECTRON CONFINEMENT ENERGY; ELLIOTT-YAFET PROCESS; QUANTUM CONFINEMENT ENERGY; SPIN RELAXATION PROCESS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033176797     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4680     Document Type: Article

References (4)

1. Y. Nishikawa, A. Tackeuchi, M. Yamaguchi, S.Muto and O. Wada: IEEE J. Sci. Top. Quantum Electron. 2 (1996) 661.
2. T. Kawazoe, T. Mishina and Y. Masumoto: Jpn. J. Appl. Phys. 32 (1993) L1756.
3. J. T. Hyland, G. T. Kennedy and A. Miller: IEEE Photon. Technol. Lett. 10 (1998) 1419.
4. H. Ando, T. Sogawa and H. Gotoh: Appl. Phys. Lett. 73 (1998) 566.