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Volumn 273-274, Issue , 1999, Pages 575-578

Electronic and structural properties of vacancy and self-interstitial defects in germanium

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRONIC PROPERTIES; IONIZATION OF SOLIDS; RELAXATION PROCESSES;

EID: 0033344455     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00576-1     Document Type: Article
Times cited : (19)

References (24)
  • 3
    • 0001599099 scopus 로고
    • S.T. Pantelides (Ed.), Gordon and Breach, New York
    • G.D. Watkins, in: S.T. Pantelides (Ed.), Deep Centers in Semiconductors, Gordon and Breach, New York, 1986, p. 147.
    • (1986) Deep Centers in Semiconductors , pp. 147
    • Watkins, G.D.1
  • 21
    • 0343042214 scopus 로고
    • and references therein
    • C.J. Hwang, L.A.K. Watt, Phys. Rev. 171 (1968) 958 and references therein.
    • (1968) Phys. Rev. , vol.171 , pp. 958
    • Hwang, C.J.1    Watt, L.A.K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.