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Journal of Crystal Growth

Volumn 206, Issue 4, 1999, Pages 263-266

GaInAsSb/InP multiple-quantum-well structure grown by metalorganic vapor-phase epitaxy

(5) Chang, J R a Su, Y K a Lin, C L a Jaw, D H b Lin, W c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b WUFENG INSTITUTE OF TECHNOLOGY (Taiwan)

c CHUNGHWA TELECOM CO LTD (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; LIGHT ABSORPTION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

DOUBLE CRYSTAL X RAY DIFFRACTION (DCXRD); FULL WIDTH AT HALF MAXIMUM (FWHM);

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0033341691 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(99)00330-9 Document Type: Article

Times cited : (2)

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