New type of persistent photoconductivity related to DX-center: The study of interband PPC in Si-doped AlGaAs

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 792-795

  Piotrzkowski, R ^a   Litwin Staszewska, E ^a   Bosc, F ^b   Sicart, J ^b   Robert, J L ^b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY MEASUREMENT; ENERGY GAP; HALL EFFECT; PHOTOCONDUCTIVITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

HOLE CAPTURE; PERSISTENT PHOTOCONDUCTIVITY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0033340344     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00651-1     Document Type: Article

References (10)

1. T. Suski, in: Semiconductors and Semimetals, Vol. 54, Academic Press, New York, 1998, p. 485.
2. P.L. Coz, C. Ghezzi, A. Parisini, Semicond. Sci. Technol. 8 (1993) 13.
3. E. Litwin-Staszewska, T. Suski, C. Skierbiszewski, F. Kobbi, J.L. Robert, V. Mosser, J. Appl. Phys. 77 (1994) 405.
4. L. Dmowski et al., Jpn. J. Appl. Phys. 32 (Suppl. 32-1) (1993) 221.
5. J.L. Robert, F. Bosc, J. Sicart, V. Mosser, Phys. Stat. Sol. B 211 (1999) 481.
6. G. Brunthaler, K. Ploog, W. Jantsch, Phys. Rev. Lett. 63 (1989) 2276.
7. R. Fletcher et al., Phys. Rev. B 41 (1990) 10649.
8. R. Piotrzkowski, E. Litwin-Staszewska, J.L. Robert, in: H. Heinrich, W. Jantsch (Eds.), Proceedings of the 17th ICDS, Defect in Semiconductors 17, Mater. Sci. Forum, Vol. 143-147, Trans. Tech. Publications, Switzerland, 1993, p. 1135.
9. R. Piotrzkowski, E. Litwin-Staszewska, J. Przybytek, Phys. Stat. Sol. B 198 (1996) 205.
10. R. Piotrzkowski, E. Litwin-Staszewska, P. Lorenzini, J.L. Robert, Semicond. Sci. Technol. 7 (1992) 103.