Photoionization of the Si-DX center in AlGaAs: The effects of pressure and local configuration

Physica Status Solidi (B) Basic Research

Volumn 198, Issue 1, 1996, Pages 205-210

  Piotrzkowski, R ^a   Litwin Staszewska, E ^a   Przybytek, J ^b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030520803     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.2221980128     Document Type: Article

References (11)

1. D. J. CHADI and K. J. CHANG, Phys. Rev. Letters 61, 873 (1988); Phys. Rev. B 39, 10063 (1989).
2. D. J. CHADI and K. J. CHANG, Phys. Rev. Letters 61, 873 (1988); Phys. Rev. B 39, 10063 (1989).
3. J. DABROWSKI and M. SCHEFFLER, Proc. 16th ICDS, Mater. Sci. Forum 83/87, 735 (1992).
4. T. N. MORGAN, in: Defects in Semiconductors Vol. 15, Ed. G. FERENCZI, Trans. Tech. Publ., Switzerland, 1989 (p. 1079).
5. P. M. MOONEY, T. N. THEIS, and S. L. WRIGHT, ibid, (p. 1109).
6. R. PIOTRZKOWSKI, E. LITWIN-STASZEWSKA, J. L. ROBERT, V. MOSSER, and P. LORENZINI, Semicond. Sci. Technol. 6, 500 (1991).
7. R. PIOTRZKOWSKI, E. LITWIN-STASZEWSKA, P. LORENZINI, and J. L. ROBERT, Semicond. Sci. Technol. 7, 103 (1992).
8. R. LEGROS, P. M. MOONEY, and S. L. WRIGHT, Phys. Rev. B 35, 7505 (1987).
9. P. M. MOONEY, G. A. NORTHROP, T. M. MORGAN, and H. G. GRIMMEISS, Phys. Rev. B 37, 8298 (1988).
10. T. SUSKI, A. R. GOÑI, K. SYASSEN. and V. MOSSER, in: Proc. 4th Internat. Conf. High Pressure Semiconductor Physics, Porto Carras (Greece), Ed. D. S. KYRIAKOS and O. E. VALASSIADES University of Thessaloniki, 1990 (p. 225).
11. Z. Su and J. W. FARMER, Phys. Rev. B 46, 9772 (1992).