Epitaxial growth of srtio3 films on si(100) substrates using a focused electron beam evaporation method

Japanese Journal of Applied Physics

Volumn 30, Issue 8, 1991, Pages L1415-L1417

  Mori, Hiroyuki ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electron beam evaporation; Epitaxial growth; Si; Sr; SrTiO3

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; ELECTRON BEAMS; SEMICONDUCTING SILICON;

STOICHIOMETRY; STRONTIUM TITANATE;

STRONTIUM COMPOUNDS;

EID: 0026206192     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.L1415     Document Type: Article

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