Atomic scale modeling of the silicon (100) thermal oxidation, a kinetic Monte Carlo approach

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 213-218

  Esteve, A ^a   Djafarirouhani, M ^a   Faurous, Ph ^a   Esteve, D ^a  

^a SIGMA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; MATHEMATICAL MODELS; MONTE CARLO METHODS; REACTION KINETICS; SEMICONDUCTOR GROWTH; THERMOOXIDATION;

ATOMIC SCALE MODELING; OXIDE DEFECT GENERATION;

SEMICONDUCTING SILICON;

EID: 0033335860     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-213     Document Type: Conference Paper

References (11)

1. A.C. Diebold, K. Monahan, Solid State Technology 41, p. 50 (1998)
2. Y. Miyamoto and A. Oshiyama, Phys. Rev. B 41, p. 12680 (1990)
3. T. Uchiyama and M. Tsukada, Phys. Rev. B 53, p. 7917 (1996)
4. K. Kato, T. Uda, K. Terakura, Phys. Rev. Lett. 80, p. 2000 (1998)
5. T. Engel, Surf. Sci. Rep. 18, p. 91 (1993)
6. A. Munkholm, S. Brennan, F. Comin, L. Ortega, Phys. Rev. Lett., 75, p. 4254 (1995)
7. A. Ourmazd, D.W. Taylor, J.A. Rentschier, J. Bevk, Phys. Rev. Lett. 59, p.213 (1987)
8. A. Estève, M. Djafari Rouhani, D. Estève, to be published in Microelectronics Reliability (1999)
9. A. Estève, M. Djafari Rouhani, D. Estève, to be published in Journal of Non-Crystalline Solids (1999)
10. S. Fujita, H. Watnabe, S. Maruno, M. Ichikawa, T. Kamura, Appl. Phys. Lett.71, p. 885 (1997)
11. Y. Enta, Y. Miyanishi, H. Irimachi, M. Niwano, M. Suemitsu, N. Miyamoto, E. Shigemasa, H. Kato, J. Vac. Sci. Technol. A 16, p. 1716 (1998)