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Surface Science

Volumn 433-435, Issue , 1999, Pages 373-376

The initial stages of Ge growth on vicinal Si (001) studied by reflectance anisotropy spectroscopy

(5) Power, J R a Weightman, P a Bose, S b Shkrebtii, A I c Del Sole, R d

a UNIVERSITY OF LIVERPOOL (United Kingdom)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

c UNIVERSITY OF TORONTO (Canada)

d UNIVERSITY OF ROME TOR VERGATA (Italy)

Author keywords

Dimer; Germanium; Growth; Reflectance anisotropy spectroscopy; Si(001)

Indexed keywords

CRYSTAL STRUCTURE; LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRON SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

DIMER ORIENTATION; REFLECTANCE ANISOTROPY SPECTROSCOPY;

CRYSTAL GROWTH;

EID: 0033334520 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(99)00502-6 Document Type: Article

Times cited : (4)

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