Sensitivity of reflectance anisotropy spectroscopy to the orientation of ge dimers on vicinal Si(001)

Physical Review Letters

Volumn 80, Issue 14, 1998, Pages 3133-3136

  Power, J R ^a   Weightman, P ^a   Bose, S ^b   Shkrebtii, A I ^c   Sole, R Del ^d  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c UNIVERSITY OF TORONTO   (Canada)

^d UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; ELECTRON TRANSITIONS; FILM GROWTH; MONOLAYERS; PHOTOSENSITIVITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACES;

DIMERS; REFLECTANCE ANISOTROPY SPECTROSCOPY;

SPECTROSCOPY;

EID: 0032489764     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.80.3133     Document Type: Article

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