Low threshold GaInAsP lasers with semiconductor/air DBR fabricated by inductively coupled plasma etching

CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics

Volumn 4, Issue , 1999, Pages 1297-1298

  Ariga, M ^a   Sekido, Y ^a   Sakai, A ^a   Baba, T ^a   Matsutani, A ^b   Koyama, F ^b   Iga, K ^b  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DBR LASERS; FABRICATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INDUCTIVELY COUPLED PLASMA; SEMICONDUCTOR LASERS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRON BEAM LITHOGRAPHY; FINITE DIFFERENCE METHOD; LIGHT REFLECTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

FDTD SIMULATIONS; HIGH REFLECTIVITY; HIGH YIELD; ICP ETCHING; INDUCTIVELY COUPLED PLASMA (ICP); LASING THRESHOLD; LOW THRESHOLDS; SIDEWALL ANGLES;

SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS;

ANISOTROPIC WET ETCHING; DISTRIBUTED BRAGG REFLECTORS; GALLIUM INDIUM ARSENIDE PHOSPHIDE LASERS; INDUCTIVELY COUPLED PLASMA ETCHING; THRESHOLD CURRENT;

EID: 0033333979     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CLEOPR.1999.814783     Document Type: Conference Paper

References (3)

1. T. Baba, M. Hamasaki, N. Watanabe, P. Kaewplung, A. Matsutani, T. Mukaihara, F. Koyama and K. Iga, Jpn. J. Appl. Phys., 35, 1390-1394 (1996).
2. T. Mukaihara, N. Yamanaka, N. Iwai, T. Ishikawa and A. Kasukawa, Electron Lett., 34, 882-884 (1998).
3. A. Matsutani, F. Koyama and K. Iga, Jpn. J. Appl. Phys., 37, 6655-6656 (1998).