Numerical analysis of the transient response in amorphous silicon

Journal of Applied Physics

Volumn 82, Issue 9, 1997, Pages 4504-4507

  Popović, Pavle ^a   Bassanese, Elvis ^a   Smole, Franc ^a   Furlan, Jože ^a   Grebner, Stefan ^b   Schwarz, Reinhard ^b  

^a UNIVERSITY OF LJUBLJANA   (Slovenia)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012217599     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366184     Document Type: Article

References (9)

1. V. I. Arkhipov, M. S. Iovu, A. I. Rudenko, and S. D. Shutov, Phys. Status Solidi A 54, 67 (1979).
2. T. Tiedje and A. Rose, Solid State Commun. 37, 49 (1980).
3. J. Orenstein and M. Kastner, Phys. Rev. Lett. 46, 1421 (1981).
4. M. Kastner and D. Monroe, Sol. Energy Mater. 8, 41 (1982).
5. D. Mendoza, Jpn. J. Appl. Phys., Part 1 29, 1879 (1990).
6. G. J. Adriaenssens et al., Phys. Rev. B 51, 9661 (1995).
7. E. Bassanese and J. Furlan, J. Phys. Chem. Solids 56, 1201 (1995).
8. P. Popović et al., J. Non-Cryst. Solids 191, 184 (1995).
9. R. E. Bank et al., IEEE Trans. Electron Devices Ed-32, 1992 (1985).