Formation of pyramidal pits at the interface of 3C-SiC and Si(001) substrates grown by gas source MBE

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 247-250

  Schmitt, J ^a   Troffer, T ^a   Christiansen, K ^a   Christiansen, S ^a   Heibig, R ^a   Pensl, G ^a   Strunk, H P ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

3C SiC Si Interface Formation; Misfit Strain Relaxation; Molecular Beam Epitaxy

Indexed keywords

CARBONIZATION; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; FINITE ELEMENT METHOD; MOLECULAR BEAM EPITAXY; MORPHOLOGY; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ELASTIC STRAIN RELAXATION; MISFIT STRAIN RELAXATION;

SILICON CARBIDE;

EID: 0031673034     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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