Effect of substrate bias on Si epitaxial growth using sputtering-type electron cyclotron resonance (ECR) plasma

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 11 B, 1999, Pages

  Gao, Junsi ^a   Nakashima, Hiroshi ^a   Wang, Junli ^a   Iwanaga, Kanako ^a   Gao, Dawei ^a   Furukawa, Katsuhiko ^a   Muraoka, Katsunori ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; IONS; PLASMA APPLICATIONS; SEMICONDUCTING FILMS; SPUTTER DEPOSITION; SUBSTRATES; THIN FILMS;

ELECTRON CYCLOTRON RESONANCE (ECR) PLASMA; SUBSTRATE BIAS;

SEMICONDUCTING SILICON;

EID: 0033328840     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1293     Document Type: Article

References (6)

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