Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 205, Issue 4, 1999, Pages 607-612

  Jiang, W H ^a   Xu, H Z ^a   Xu, B ^a   Wu, J ^a   Ye, X L ^a   Liu, H Y ^a   Zhou, W ^a   Sun, Z Z ^a   Li, Y F ^a   Liang, J B ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR ORIENTATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES;

HIGH INDEX SUBSTRATES; INDIUM GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033327817     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00304-8     Document Type: Article

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