Diffusivity of arsenic interstitials in GaAs studied by sulfur in-diffusion

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 697-700

  Leipner, H S ^a   Scholz, R F ^b   Engler, N ^a,b   Borner F ^a   Werner, P ^b   Gosele U ^b  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CATHODOLUMINESCENCE; CRYSTAL LATTICES; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); POSITRONS; SULFUR;

ELECTROCHEMICAL CAPACITY-VOLTAGE PROFILING; INTERSTITIALS; POSITRON ANNIHILATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033323454     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00613-4     Document Type: Article

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8. R.F. Scholz et al., J. Appl. Phys. (1999), submitted for publication.