Atomic force microscopy examination of the evolution of the surface morphology of Bi4Ti3O12 grown by molecular beam epitaxy

Thin Solid Films

Volumn 357, Issue 1, 1999, Pages 13-17

  Brown, G W ^a   Hawley, M E ^b   Theis, C D ^c   Yeh, J ^c   Schlom, D G ^c  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; SEMICONDUCTING BISMUTH COMPOUNDS; STRONTIUM COMPOUNDS;

BISMUTH TITANATE; STRANSKI-KRASTANOV GROWTH; STRONTIUM TITANATE;

SEMICONDUCTING FILMS;

EID: 0033322593     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00466-6     Document Type: Article

References (23)

1. Aurivillius B. Arkiv Kemi. 1:1949;463.
2. Aurivillius B., Fang P.H. Phys. Rev. 126:1962;893.
3. Wu S.-Y. IEEE Trans. Electron Devices ED. 21:1974;499.
4. Wu S.-Y., Takei W.J., Francombe M.H. Ferroelectrics. 10:1976;209.
5. Ramesh R., Luther K., Wilkens B., et al. Appl. Phys. Lett. 57:1990;1505.
6. Rae A.D., Thompson J.G., Withers R.L., Willis A.C. Acta Cryst. B. 46:1990;474.
7. Hellwege K.-H., Hellwege A.M. Landolt-Bornstein: Numerical Data and Functional Relationships in Science and Technology, New Series, Group III, Vol 16a. 1981;237 Springer-Verlag, Berlin.
8. Theis C.D., Yeh J., Schlom D.G., Hawley M.E., Brown G.W., Jiang J.C., Pan X.Q. Appl. Phys. Lett. 72:1998;2817.
9. Zhang Z., Lagally M.G. Science. 276:1997;377.
10. Zheng X.-Y., Lowndes D.H., Zhu S., Budai J.D., Warmack R.J. Phys. Rev. B. 45:1992;7584.
11. Dediu V., et al. Phys. Rev. B. 54:1996;1564.
12. Pashley D.W. Mater. Res. Soc. Symp. Proc. 37:1985;67.
13. Snyder C.W., Orr B.G., Kessler D., Sander L.M. Phys. Rev. Lett. 66:1991;3032.
14. Family F., Vicsek T. J. Phys. A: Math. Gen. 18:1985;L75.
15. Lapujoulade J. Surf. Sci. Rep. 20:1994;191.
16. He Y.-L., Yang H.-N., Lu T.-M., Wang G.-C. Phys. Rev. Lett. 69:1992;3770.
17. Park Y.-B., Rhee S.-W., Hong J.-H. J. Vac. Sci. Technol. B. 15:1997;1995.
18. Kawasaki M., Takahashi K., Maeda T., et al. Science. 266:1994;1540.
19. Mitchell M.W., Bonnell D.A. J. Mater. Res. 5:1990;2244.
20. Gomez-Rodriguez J.M., Baro A.M., Salvarezza R.C. J. Vac. Sci. Technol. B. 9:1993;495.
21. Krim J., Heyvaert I., Van Haesendonck C., Bruynseraede Y. Phys. Rev. Lett. 70:1993;57.
22. Lee N.-E., Cahill D.G., Greene J.E. J. Appl. Phys. 80:1996;2199.
23. Karr B.W., Petrov I., Cahill D.G., Greene J.E. Appl. Phys. Lett. 70:1997;1703.