-
1
-
-
0012371108
-
Atomic resolution electron structure in silicon-based semiconductors
-
Batson P.E. Atomic resolution electron structure in silicon-based semiconductors. J. Electron Microsc. 45:1996;51-58.
-
(1996)
J. Electron Microsc.
, vol.45
, pp. 51-58
-
-
Batson, P.E.1
-
2
-
-
0023312264
-
Electron energy-loss spectroscopy studies of nanometer-scale structures in alumina produced by intence electron-beam irradiation
-
Berger D., Salisbury I.G., Milne R.H., Imeson D., Humphreys C.J. Electron energy-loss spectroscopy studies of nanometer-scale structures in alumina produced by intence electron-beam irradiation. Philos. Mag. B. 55:1987;341-358.
-
(1987)
Philos. Mag. B
, vol.55
, pp. 341-358
-
-
Berger, D.1
Salisbury, I.G.2
Milne, R.H.3
Imeson, D.4
Humphreys, C.J.5
-
3
-
-
0006665412
-
Novel fabrication method for nanometer-scale silicon dots and wires
-
Chen G.S., Boothroyd C.B., Humphreys C.J. Novel fabrication method for nanometer-scale silicon dots and wires. Appl. Phys. Lett. 62:1993;1949-1951.
-
(1993)
Appl. Phys. Lett.
, vol.62
, pp. 1949-1951
-
-
Chen, G.S.1
Boothroyd, C.B.2
Humphreys, C.J.3
-
4
-
-
0031102861
-
Visible light emission from Si nanocrystals grown by ion implantation and subsequent annealing
-
Guha S., Pace M.D., Dunn D.N., Singer I.L. Visible light emission from Si nanocrystals grown by ion implantation and subsequent annealing. Appl. Phys. Lett. 70:1997;1207-1209.
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 1207-1209
-
-
Guha, S.1
Pace, M.D.2
Dunn, D.N.3
Singer, I.L.4
-
5
-
-
0038064270
-
2 on Si with scanning Auger electron microscope
-
2 on Si with scanning Auger electron microscope. J. Appl. Phys. 50:1979;6020-6022.
-
(1979)
J. Appl. Phys.
, vol.50
, pp. 6020-6022
-
-
Ichimura, S.1
Shimizu, R.2
-
6
-
-
0000683123
-
Microstructure and optical properties of free-standing porus silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites
-
Kanemitu Y., Uto H., Matsumoto T., Futagi T., Mimura H. Microstructure and optical properties of free-standing porus silicon films: size dependence of absorption spectra in Si nanometer-sized crystallites. Phys. Rev. Lett. B48:1993;2827-2830.
-
(1993)
Phys. Rev. Lett.
, vol.48
, pp. 2827-2830
-
-
Kanemitu, Y.1
Uto, H.2
Matsumoto, T.3
Futagi, T.4
Mimura, H.5
-
7
-
-
21844527373
-
Nanometer scale electron beam processing and in situ atomic observation of vacuum-deposited MgO films in high-resolution transmission electron microscopy
-
Kizuka T., Tanaka N. Nanometer scale electron beam processing and in situ atomic observation of vacuum-deposited MgO films in high-resolution transmission electron microscopy. Philos. Mag. A. 71:1995;631-639.
-
(1995)
Philos. Mag. a
, vol.71
, pp. 631-639
-
-
Kizuka, T.1
Tanaka, N.2
-
8
-
-
21544465142
-
Stability of ionically bonded surfaces in ionizing environments
-
Knotek M.L., Feibelman P.J. Stability of ionically bonded surfaces in ionizing environments. Surf. Sci. 90:1979;78-90.
-
(1979)
Surf. Sci.
, vol.90
, pp. 78-90
-
-
Knotek, M.L.1
Feibelman, P.J.2
-
10
-
-
0344117168
-
Energy loss spectroscopy and electron microscopy of photoluminescent P-type porous silicon treated with NaOH solution
-
Song M., Zhou W., Fukuda Y., Furuya K. Energy loss spectroscopy and electron microscopy of photoluminescent P-type porous silicon treated with NaOH solution. J. Surf. Analysis. 3:1998;365-371.
-
(1998)
J. Surf. Analysis
, vol.3
, pp. 365-371
-
-
Song, M.1
Zhou, W.2
Fukuda, Y.3
Furuya, K.4
-
11
-
-
0032663323
-
Fabrication and analysis of the nanometer-sized structure of silicon by ultrahigh vacuum field emission transmission electron microscope
-
in press
-
Takeguchi M., Tanaka M., Furuya K. Fabrication and analysis of the nanometer-sized structure of silicon by ultrahigh vacuum field emission transmission electron microscope. Appl. Surf. Sci. 1999;. in press.
-
(1999)
Appl. Surf. Sci.
-
-
Takeguchi, M.1
Tanaka, M.2
Furuya, K.3
-
12
-
-
0019682613
-
Optical electrical and structural properties of plasma- deposited amorphous silicon
-
Tanaka K., Nakagawa K., Matsuda A., Matsumura M., Yamamoto H., Yamasaki S., Okushi H., Iizima S. Optical electrical and structural properties of plasma- deposited amorphous silicon. Jpn. J. Appl. Phys. 20:(20-1):1981;267-274.
-
(1981)
Jpn. J. Appl. Phys.
, vol.20
, Issue.201
, pp. 267-274
-
-
Tanaka, K.1
Nakagawa, K.2
Matsuda, A.3
Matsumura, M.4
Yamamoto, H.5
Yamasaki, S.6
Okushi, H.7
Iizima, S.8
-
13
-
-
0032047207
-
Surface observation of Mo nanocrystals deposited on Si (111) thin films by a newly developed ultrahigh vacuum field-emission transmission electron microscope
-
Tanaka M., Furuya K., Takeguchi M., Honda T. Surface observation of Mo nanocrystals deposited on Si (111) thin films by a newly developed ultrahigh vacuum field-emission transmission electron microscope. Thin Solid Films. 319:1998;110-114.
-
(1998)
Thin Solid Films
, vol.319
, pp. 110-114
-
-
Tanaka, M.1
Furuya, K.2
Takeguchi, M.3
Honda, T.4
|